FCPF7N60T【PDF 2/11 页】MOSFET N-CH 600V 7A TO-220F

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Package Marking and Ordering Information

Part Number

FCP7N60

FCPF7N60

FCPF7N60YDTU

Top Mark

FCP7N60

FCPF7N60

FCPF7N60

Package

TO220

TO220F

TO-220F

(Y-formed)

Packing Method

Tube

Tube

Tube

Reel Size

N/A

N/A

N/A

Tape Width

N/A

N/A

N/A

Quantity

50 units

50 units

50 units

Electrical Characteristics

T C = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

BV DSS

Δ BV DSS

/ Δ T J

BV DS

I DSS

I GSSF

I GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Drain-Source Avalanche Breakdown

Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V GS = 0 V, I D = 250 μ A, T J = 25 ° C

V GS = 0 V, I D = 250 μ A, T J = 150 ° C

I D = 250 μ A, Referenced to 25 ° C

V GS = 0 V, I D = 7 A

V DS = 600 V, V GS = 0 V

V DS = 480 V, T C = 125 ° C

V GS = 30 V, V DS = 0 V

V GS = -30 V, V DS = 0 V

600

--

--

--

--

--

--

--

--

650

0.6

700

--

--

--

--

--

--

--

--

1

10

100

-100

V

V

V/ ° C

V

μ A

μ A

nA

nA

On Characteristics

V GS(th)

R DS(on)

g FS

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

V DS = V GS , I D = 250 μ A

V GS = 10 V, I D = 3.5 A

V DS = 40 V, I D = 3.5 A

3.0

--

--

--

0.53

6

5.0

0.6

--

V

Ω

S

Dynamic Characteristics

C iss

C oss

C rss

C oss

C oss(eff.)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V DS = 25 V, V GS = 0 V,

f = 1 MHz

V DS = 480 V, V GS = 0 V, f = 1 MHz

V DS = 0 V to 400 V, V GS = 0 V

--

--

--

--

--

710

380

34

22

60

920

500

--

29

--

pF

pF

pF

pF

pF

Switching Characteristics

t d(on)

t r

t d(off)

t f

Q g

Q gs

Q gd

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD = 300 V, I D = 7 A,

V GS = 10 V, R G = 25 Ω

V DS = 480 V, I D = 7 A,

V GS = 10 V

(Note 4)

(Note 4)

--

--

--

--

--

--

--

35

55

75

32

23

4.2

11.5

80

120

160

75

30

5.5

--

ns

ns

ns

ns

nC

nC

nC

Drain-Source Diode Characteristics and Maximum Ratings

I S

I SM

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

--

--

--

--

7

21

A

A

V SD

t rr

Q rr

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

V GS = 0 V, I S = 7 A

V GS = 0 V, I S = 7 A,

dI F /dt =100 A/ μ s

--

--

--

--

360

4.5

1.4

--

--

V

ns

μ C

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. I AS = 3.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.

3. I SD ≤ 7 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.

4. Essentially independent of operating temperature typical characteristics.

?2005 Fairchild Semiconductor Corporation

FCP7N60 / FCPF7N60 Rev. C1

2

www.fairchildsemi.com

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